参数项参数值
参数项参数值
Forward Transconductance - Min49 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current65 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time33 ns
Width4.4 mm
Rds On - Drain-Source Resistance24 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Height15.65 mm
Length10 mm
Qg - Gate Charge70 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
PackagingTube
BrandInfineon Technologies
Factory Pack Quantity1000
ManufacturerInfineon
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET MOSFT 200V 65A 26mOhm 70nC Qg
Fall Time31 ns
ImageInfineon Technologies IRFB4227PBF
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.211644 oz
Pd - Power Dissipation330 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time20 ns
Moisture Sensitivity Level1 (Unlimited)