参数项参数值
参数项参数值
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current- 0.1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width4.19 mm
Height5.33 mm
Length5.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseTO-92-3 Kinked Lead
Mounting StyleThrough Hole
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingAmmo Pack
TARIC8541210000
Unit Weight0.008466 oz
Pd - Power Dissipation500 mW
RoHS Details
ImageON Semiconductor / Fairchild BC559CTA
SeriesBC559
BrandON Semiconductor / Fairchild
Factory Pack Quantity2000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerON Semiconductor
USHTS8541210095
DescriptionBipolar Transistors - BJT Transistor PNP Epitaxial Silicon