参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min4 S
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Minimum Operating Temperature- 55 C
KRHTS8541219000
Transistor PolarityN-Channel
Id - Continuous Drain Current1.15 A
JPHTS8541210101
Vgs - Gate-Source Voltage- 20 V, + 20 V
CAHTS8541210000
Length2.9 mm
Height1.45 mm
ImageVishay Semiconductors SI2328DS-T1-GE3
Typical Turn-On Delay Time7 ns
Product CategoryMOSFET
Rds On - Drain-Source Resistance250 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time9 ns
Maximum Operating Temperature+ 150 C
DescriptionMOSFET 100V Vds 20V Vgs SOT-23
Package / CaseSOT-23-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width1.6 mm
Mounting StyleSMD/SMT
RoHS Details
TARIC8541290000
BrandVishay Semiconductors
Factory Pack Quantity3000
MXHTS85412101
ManufacturerVishay
Product TypeMOSFET
SeriesSI2
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time10 ns
Unit Weight0.000282 oz
CNHTS8541210000
Part # AliasesSI2328DS-GE3
Pd - Power Dissipation0.73 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time11 ns