参数项参数值
参数项参数值
Forward Transconductance - Min28 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current30 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance15 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24 ns
Width6.22 mm
Length6.73 mm
MXHTS85412999
Qg - Gate Charge9.4 nC
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time4 ns
CNHTS8541409000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.009184 oz
ImageON Semiconductor / Fairchild FDD6612A
TARIC8541290000
Pd - Power Dissipation2.8 W
RoHS Details
Part # AliasesFDD6612A_NL
Factory Pack Quantity2500
SeriesFDD6612A
ManufacturerON Semiconductor
BrandON Semiconductor / Fairchild
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage30 V
Product TypeMOSFET
Number of Channels1 Channel
TradenamePowerTrench
DescriptionMOSFET 30V N-Ch PowerTrench
SubcategoryMOSFETs
Rise Time5 ns
USHTS8541290095
TypeMOSFET