参数项参数值
参数项参数值
DC Current Gain hFE Max400
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width3.25 mm
Collector-Emitter Saturation Voltage0.1 V
Height1.5 mm
Length8 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Package / CaseTO-126-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageON Semiconductor / Fairchild KSD1691YSTU
PackagingTube
SubcategoryTransistors
BrandON Semiconductor / Fairchild
SeriesKSD1691
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1920
ManufacturerON Semiconductor
Unit Weight0.026843 oz
USHTS8541290095
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN Si Transistor Epitaxial
Part # AliasesKSD1691YSTU_NL
Pd - Power Dissipation1300 mW