参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current12 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time17 ns
Rds On - Drain-Source Resistance214 mOhms
Transistor Type1 N-Channel
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge18 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Factory Pack Quantity500
CNHTS8541290000
BrandInfineon Technologies
Product TypeMOSFET
DescriptionMOSFET LOW POWER_NEW
Channel ModeEnhancement
ImageInfineon Technologies IPP60R280P7XKSA1
SeriesCoolMOS P7
TARIC8541290000
ManufacturerInfineon
Product CategoryMOSFET
Fall Time9 ns
RoHS Details
Unit Weight0.063493 oz
SubcategoryMOSFETs
Part # AliasesIPP60R280P7 SP001647026
Pd - Power Dissipation53 W
USHTS8542390001
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time9 ns