参数项参数值
参数项参数值
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO230 V
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max230 V
Continuous Collector Current15 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Length16.26 mm
Width5.3 mm
Height21.08 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage0.4 V
DC Collector/Base Gain hfe Min50
Minimum Operating Temperature- 65 C
JPHTS8541290100
Package / CaseTO-247-3
CAHTS8541290000
CNHTS8541290000
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Factory Pack Quantity30
PackagingTube
ImageON Semiconductor MJW3281AG
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - BJT 15A 230V 200W NPN
SeriesMJW3281A
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.215171 oz
USHTS8541290075