SI7611DN-T1-GE3

SI7611DN-T1-GE3

厂牌：Vishay

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046151468

描述：Trans MOSFET P-CH 40V 9.3A 8-Pin PowerPAK 1212 T/R

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min25 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current18 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Height1.04 mm

Length3.3 mm

JPHTS8541290100

Typical Turn-On Delay Time10 ns, 47 ns

Minimum Operating Temperature- 50 C

CAHTS8541290000

Rds On - Drain-Source Resistance25 MOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time28 ns, 30 ns

RoHS Details

Package / CasePowerPAK-1212-8

Factory Pack Quantity3000

ImageVishay Semiconductors SI7611DN-T1-GE3

PackagingReel

PackagingCut Tape

PackagingMouseReel

Maximum Operating Temperature+ 150 C

Width3.3 mm

BrandVishay Semiconductors

Mounting StyleSMD/SMT

TARIC8541290000

ManufacturerVishay

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET -40V Vds 20V Vgs PowerPAK 1212-8

Qg - Gate Charge41 nC

MXHTS85412999

Product TypeMOSFET

SeriesSI7

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.016820 oz

Fall Time9 ns, 12 ns

CNHTS8541290000

Part # AliasesSI7611DN-GE3

Pd - Power Dissipation39 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time11 ns, 150 ns

Moisture Sensitivity Level1 (Unlimited)