参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current12 A, - 9 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 12 V, + 12 V
JPHTS8541290100
CAHTS8541290000
Product CategoryMOSFET
Minimum Operating Temperature- 55 C
Rds On - Drain-Source Resistance15 mOhms, 28 mOhms
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-SO-8
PackagingReel
PackagingMouseReel
PackagingCut Tape
DescriptionMOSFET -20V Vds 12V Vgs PowerPAK SO-8
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
Product TypeMOSFET
BrandVishay Semiconductors
Qg - Gate Charge27 nC, 48 nC
Factory Pack Quantity3000
MXHTS85412999
RoHS Details
SubcategoryMOSFETs
SeriesSI7
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
CNHTS8541290000
Pd - Power Dissipation3.5 W
TradenameTrenchFET
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)