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IRF640NSTRRPBF
厂牌：Infineon Technologies AG
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046151937
描述：MOSFET N-CH 200V 18A D2PAK
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min6.8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Width6.22 mm
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge44.7 nC
Package / CaseD2PAK-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
RoHS Details
ImageInfineon / IR IRF640NSTRRPBF
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time5.5 ns
BrandInfineon / IR
ManufacturerInfineon
Factory Pack Quantity800
Product CategoryMOSFET
Unit Weight0.139332 oz
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC
Pd - Power Dissipation150 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time19 ns
TypeHEXFET Power MOSFET