参数项参数值
参数项参数值
Forward Transconductance - Min10 s
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time24 ns
Rds On - Drain-Source Resistance250 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time9 ns
Height4.6 mm
Length10.4 mm
Mounting StyleSMD/SMT
Package / CaseTO-263-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Factory Pack Quantity1000
BrandSTMicroelectronics
SeriesSTB20NM50
Channel ModeEnhancement
Product TypeMOSFET
DescriptionMOSFET N-Ch 500 Volt 20 Amp
ManufacturerSTMicroelectronics
Product CategoryMOSFET
Fall Time8.5 ns
RoHS Details
Unit Weight0.139332 oz
SubcategoryMOSFETs
Pd - Power Dissipation192 W
Vds - Drain-Source Breakdown Voltage500 V
Number of Channels1 Channel
Rise Time16 ns
TypeMOSFET