参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current3.8 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
MXHTS85412999
Typical Turn-On Delay Time5.3 ns
CNHTS8541290000
Rds On - Drain-Source Resistance42.5 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time38.5 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Qg - Gate Charge6.3 nC
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
BrandDiodes Incorporated
Product CategoryMOSFET
Factory Pack Quantity3000
ImageDiodes Incorporated DMP2120U-7
TARIC8541290000
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET MOSFET BVDSS: 8V 24V
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time23.2 ns
Unit Weight1 oz
USHTS8541290095
Pd - Power Dissipation1.3 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time15.7 ns