参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current8.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance23 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time42 ns
Width3.9 mm
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge13 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
BrandON Semiconductor / Fairchild
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
SeriesFDS8884
Product CategoryMOSFET
ManufacturerON Semiconductor
TARIC8541290000
Product TypeMOSFET
Channel ModeEnhancement
RoHS Details
Factory Pack Quantity2500
Fall Time21 ns
ImageON Semiconductor / Fairchild FDS8884
SubcategoryMOSFETs
DescriptionMOSFET 30V N-Channel PwrTrench MOSFET
Unit Weight0.004586 oz
USHTS8541290095
Pd - Power Dissipation2.5 W
TradenamePowerTrench
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time9 ns