参数项参数值
参数项参数值
Forward Transconductance - Min50 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current70 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time30 ns
Width5.21 mm
Rds On - Drain-Source Resistance26 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time100 ns
Length16.13 mm
Height21.34 mm
MXHTS85415001
KRHTS8541299000
Qg - Gate Charge185 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingTube
CNHTS8541500000
BrandIXYS
SeriesIXFR140N30
Factory Pack Quantity30
Channel ModeEnhancement
TARIC8541500000
ManufacturerIXYS
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET 82 Amps 300V 0.026 Ohm Rds
Fall Time20 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.056438 oz
USHTS8541290095
Pd - Power Dissipation300 W
TradenameHiPerFET
Vds - Drain-Source Breakdown Voltage300 V
Number of Channels1 Channel
Rise Time30 ns
TypePolar Power MOSFET HiPerFET