参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width3.93 mm
Collector-Emitter Saturation Voltage0.5 V
Height4.7 mm
DC Collector/Base Gain hfe Min40
Length4.7 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleThrough Hole
Package / CaseTO-92-3 Kinked Lead
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
PackagingAmmo Pack
ImageON Semiconductor / Fairchild KSP42TA
SubcategoryTransistors
BrandON Semiconductor / Fairchild
ManufacturerON Semiconductor
SeriesKSP42
Factory Pack Quantity2000
Product TypeBJTs - Bipolar Transistors
Unit Weight0.008466 oz
USHTS8541210095
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN Si Transistor Epitaxial
Pd - Power Dissipation625 mW