参数项参数值
参数项参数值
Forward Transconductance - Min8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current23 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance27.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
MXHTS85412999
Qg - Gate Charge9.1 nC
KRHTS8541299000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.016932 oz
RoHS Details
Pd - Power Dissipation32 W
SeriesOptiMOS 3
Part # AliasesSP000447534 BSC34N8NS3GXT BSC340N08NS3GATMA1
ImageInfineon Technologies BSC340N08NS3 G
BrandInfineon Technologies
Factory Pack Quantity5000
Product TypeMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage80 V
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time3 ns
TradenameOptiMOS
DescriptionMOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3