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IPD320N20N3GATMA1
厂牌：Infineon Technologies AG
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046153594
描述：Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min28 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current34 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
Width6.22 mm
Height2.3 mm
Rds On - Drain-Source Resistance32 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
MXHTS85412999
Length6.5 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge22 nC
Package / CaseTO-252-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
ImageInfineon Technologies IPD320N20N3GATMA1
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity2500
Fall Time4 ns
SeriesOptiMOS 3
SubcategoryMOSFETs
BrandInfineon Technologies
Product CategoryMOSFET
Unit Weight0.139332 oz
DescriptionMOSFET TRENCH >=100V
ManufacturerInfineon
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation136 W
Part # AliasesIPD320N20N3 G SP001127832
Vds - Drain-Source Breakdown Voltage200 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time9 ns