参数项参数值
参数项参数值
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO230 V
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max230 V
Continuous Collector Current15 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Width5.3 mm
Length16.26 mm
Height21.08 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage0.4 V
DC Collector/Base Gain hfe Min50
Minimum Operating Temperature- 65 C
JPHTS8541290100
CNHTS8541290000
CAHTS8541290000
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
PackagingTube
Factory Pack Quantity30
ImageON Semiconductor MJW1302AG
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
RoHS Details
TARIC8541290000
SeriesMJW1302A
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 15A 250V 200W PNP
SubcategoryTransistors
ManufacturerON Semiconductor
Unit Weight1.340411 oz
USHTS8541290095