参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max1200 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Width5.3 mm
MXHTS85412999
Height20.95 mm
Length15.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingTube
TARIC8541290000
RoHS Details
SeriesSGW25N120
BrandInfineon Technologies
ImageInfineon Technologies SGW25N120
Unit Weight1.340411 oz
Product TypeIGBT Transistors
Factory Pack Quantity240
Product CategoryIGBT Transistors
SubcategoryIGBTs
ManufacturerInfineon
Continuous Collector Current Ic Max46 A
Part # AliasesSP000012565 SGW25N120FKSA1
DescriptionIGBT Transistors FAST IGBT NPT TECH 1200V 25A
USHTS8541290095