参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current6 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Length6.73 mm
Width6.22 mm
Height2.38 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage1.5 V
DC Collector/Base Gain hfe Min30
Minimum Operating Temperature- 65 C
JPHTS8541290100
Package / CaseTO-252-3
CAHTS8541290000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity2500
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor MJD42CT4G
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - BJT 6A 100V 20W PNP
SeriesMJD42C
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.012378 oz
USHTS8541290095
Pd - Power Dissipation20 W
Moisture Sensitivity Level1 (Unlimited)