参数项参数值
参数项参数值
Forward Transconductance - Min2.9 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4.5 V
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time13 ns
Width4.6 mm
Rds On - Drain-Source Resistance3.5 Ohms
Transistor Type1 N-Channel
Height9.3 mm
Typical Turn-Off Delay Time35 ns
Length10.4 mm
MXHTS85412101
KRHTS8541299000
Mounting StyleThrough Hole
Qg - Gate Charge22.5 nC
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
PackagingTube
ImageSTMicroelectronics STP4NK80ZFP
RoHS Details
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time32 ns
BrandSTMicroelectronics
ManufacturerSTMicroelectronics
SeriesSTP4NK80ZFP
Product CategoryMOSFET
Factory Pack Quantity1000
Unit Weight0.011640 oz
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET N-Ch, 800V-3ohms Zener SuperMESH 3A
Pd - Power Dissipation25 W
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time12 ns
Moisture Sensitivity Level1 (Unlimited)