参数项参数值
参数项参数值
DC Current Gain hFE Max475 at - 2 mA, - 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 0.1 A
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 300 mV
DC Collector/Base Gain hfe Min220
Width0.8 mm
Height0.75 mm
Length1.6 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-523-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.000071 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation150 mW
ImageDiodes Incorporated BC857BT-7-F
SeriesBC857B
BrandDiodes Incorporated
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541210075
DescriptionBipolar Transistors - BJT PNP BIPOLAR
Moisture Sensitivity Level1 (Unlimited)