参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time3.7 ns
Rds On - Drain-Source Resistance90 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time17.8 ns
MXHTS85412999
Qg - Gate Charge3.5 nC
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time8 ns
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.000212 oz
ImageDiodes Incorporated DMP2165UW-7
TARIC8541290000
Pd - Power Dissipation0.7 W
RoHS Details
Factory Pack Quantity3000
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Product TypeMOSFET
Number of Channels1 Channel
DescriptionMOSFET MOSFET BVDSS: 8V 24V SOT323 T&R 3K
SubcategoryMOSFETs
Rise Time8.7 ns
USHTS8541210095