参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current11 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time11.3 ns
Rds On - Drain-Source Resistance320 mOhms
Typical Turn-Off Delay Time36 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge19.5 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time11.3 ns
PackagingTube
TARIC8541290000
ImageSTMicroelectronics STF16N65M2
Unit Weight0.081130 oz
SeriesSTF16N65M2
Factory Pack Quantity1000
Pd - Power Dissipation25 W
Product TypeMOSFET
BrandSTMicroelectronics
Product CategoryMOSFET
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
DescriptionMOSFET PTD HIGH VOLTAGE
Vds - Drain-Source Breakdown Voltage650 V
USHTS8541290095
Number of Channels1 Channel
Rise Time8.2 ns