参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT100 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 500 mA
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
KRHTS8541219000
QualificationAEC-Q101
JPHTS8541210101
CAHTS8541210000
Product CategoryBipolar Transistors - BJT
ImageON Semiconductor SBC807-40LT3G
Collector-Emitter Saturation Voltage- 0.7 V
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
DC Collector/Base Gain hfe Min250
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionBipolar Transistors - BJT SS GP XSTR SPCL TR
Mounting StyleSMD/SMT
TARIC8541210000
BrandON Semiconductor
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
MXHTS85412101
ManufacturerON Semiconductor
RoHS Details
SubcategoryTransistors
SeriesBC807-40L
USHTS8541210095
Unit Weight0.000282 oz
CNHTS8541210000
Pd - Power Dissipation225 mW
Moisture Sensitivity Level1 (Unlimited)