参数项参数值
参数项参数值
Forward Transconductance - Min10 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Id - Continuous Drain Current7.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 16 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance22.7 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time48 ns
Qg - Gate Charge16.8 nC
CNHTS8541290000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingMouseReel
PackagingReel
PackagingCut Tape
Fall Time32 ns
TARIC8541290000
RoHS Details
ImageVishay Semiconductors SI2393DS-T1-GE3
Factory Pack Quantity3000
BrandVishay Semiconductors
Product TypeMOSFET
Unit Weight0.003446 oz
ManufacturerVishay
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 30-V (D-S) MOSFET P-CHANNEL
Pd - Power Dissipation2.5 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
TradenameTrenchFET
Number of Channels1 Channel
Rise Time8 ns
Moisture Sensitivity Level1 (Unlimited)