SI2308CDS-T1-GE3

厂牌：威世(VISHAY)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046158737

描述：MOSFET N-CH 60V 2.6A 150DEG C 1.6W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.6W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

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商品参数

参数项参数值

Forward Transconductance - Min3.2 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Id - Continuous Drain Current2.6 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time23 ns

Rds On - Drain-Source Resistance200 mOhms

Typical Turn-Off Delay Time10 ns

Qg - Gate Charge2 nC

Package / CaseSOT-23-3

Mounting StyleSMD/SMT

Channel ModeEnhancement

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

Fall Time16 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

Unit Weight0.005153 oz

Pd - Power Dissipation1.6 W

SeriesSi2308CDS

BrandVishay Semiconductors

ImageVishay Semiconductors SI2308CDS-T1-GE3

Product TypeMOSFET

Factory Pack Quantity3000

SubcategoryMOSFETs

ManufacturerVishay

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Product CategoryMOSFET

Rise Time25 ns

DescriptionMOSFET 60V Vds 20V Vgs SOT-23

Moisture Sensitivity Level1 (Unlimited)