参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance19 mOhms
Width3.9 mm
Transistor Type2 N-Channel
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge13 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
BrandON Semiconductor / Fairchild
CNHTS8541409000
ManufacturerON Semiconductor
Product CategoryMOSFET
TARIC8541290000
SeriesFDS8984_F085
Product TypeMOSFET
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity2500
ImageON Semiconductor / Fairchild FDS8984-F085
DescriptionMOSFET NCH PWR TRNCH MOSFET
SubcategoryMOSFETs
Unit Weight0.008127 oz
USHTS8541290095
Part # AliasesFDS8984_F085
Pd - Power Dissipation1.6 W
TradenamePowerTrench
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)