参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance850 mOhms
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge63 nC
Package / CaseTO-263-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageVishay Semiconductors IRF840STRRPBF
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity800
SeriesIRF
SubcategoryMOSFETs
Product CategoryMOSFET
BrandVishay Semiconductors
Unit Weight0.050717 oz
DescriptionMOSFET 500V N-CH HEXFET D2-PA
ManufacturerVishay
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation3.1 W
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)