参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Width9.65 mm
Rds On - Drain-Source Resistance850 mOhms
Height4.83 mm
Length10.67 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge39 nC
Mounting StyleSMD/SMT
Package / CaseTO-263-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
CNHTS8541290000
BrandVishay Semiconductors
Factory Pack Quantity1000
ManufacturerVishay
SeriesIRF
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET 500V N-CH HEXFET D2-PA
ImageVishay Semiconductors IRF840LCSPBF
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.050717 oz
USHTS8541290095
Pd - Power Dissipation125 W
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)