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商品参数
参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs850mOhm @ 4.8A, 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V
Moisture Sensitivity Level1 (Unlimited)