参数项参数值
参数项参数值
Forward Transconductance - Min37 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.3 V
TechnologySi
Id - Continuous Drain Current161 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance3.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
MXHTS85412999
Width6.22 mm
Height2.3 mm
Length6.5 mm
KRHTS8541299000
CNHTS8541210000
Qg - Gate Charge50 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 175 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time19 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRLR7843TRPBF
Product CategoryMOSFET
Unit Weight0.139332 oz
SubcategoryMOSFETs
Factory Pack Quantity2000
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation140 W
USHTS8541290095
DescriptionMOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time42 ns
Moisture Sensitivity Level1 (Unlimited)