参数项参数值
参数项参数值
KRHTS8541299000
ConfigurationSingle
Forward Transconductance - Min75 S
Transistor PolarityN-Channel
Id - Continuous Drain Current6 A
Minimum Operating Temperature- 55 C
Vgs th - Gate-Source Threshold Voltage350 mV
TechnologySi
Rds On - Drain-Source Resistance17 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time65 ns
Vgs - Gate-Source Voltage- 5 V, + 5 V
Product CategoryMOSFET
JPHTS8541290100
Package / CaseSOT-23-3
RoHS Details
ManufacturerVishay
DescriptionMOSFET 8V Vds 5V Vgs SOT-23
Typical Turn-On Delay Time6 ns
MXHTS85412999
CAHTS8541290000
Factory Pack Quantity3000
Maximum Operating Temperature+ 150 C
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandVishay / Siliconix
SubcategoryMOSFETs
Mounting StyleSMD/SMT
Qg - Gate Charge10.5 nC
Product TypeMOSFET
TradenameTrenchFET
SeriesSI2
Channel ModeEnhancement
USHTS8541290095
Unit Weight0.000282 oz
Fall Time25 ns
CNHTS8541290000
Pd - Power Dissipation2.5 W
Vds - Drain-Source Breakdown Voltage8 V
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)