参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT250 MHz
ConfigurationDual
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 0.2 A
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO- 5 V
Height1 mm
MXHTS85412101
KRHTS8541219000
Collector-Emitter Saturation Voltage- 0.4 V
Length2.2 mm
Factory Pack Quantity3000
Width1.35 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
JPHTS8541210101
Minimum Operating Temperature- 55 C
CNHTS8541210000
Package / CaseSOT-363-6
CAHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ImageDiodes Incorporated MMDT3906-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT -40V 200mW
SeriesMMDT39
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8541210095
Unit Weight0.000212 oz
Pd - Power Dissipation200 mW
Moisture Sensitivity Level1 (Unlimited)