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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min7.7 S, 4.5 S
ConfigurationDual
TechnologySi
Id - Continuous Drain Current2.7 A, 1.9 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns, 7 ns
Rds On - Drain-Source Resistance69 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time12 ns, 14 ns
Width1.6 mm
Height1.1 mm
Length2.9 mm
MXHTS85412999
Qg - Gate Charge4.5 nC, 4 nC
KRHTS8541299000
Package / CaseSSOT-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541210000
ProductMOSFET Small Signal
Channel ModeEnhancement
Fall Time3 ns, 3 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.001058 oz
SeriesFDC6327C
BrandON Semiconductor / Fairchild
ImageON Semiconductor / Fairchild FDC6327C
ManufacturerON Semiconductor
Pd - Power Dissipation960 mW
SubcategoryMOSFETs
Part # AliasesFDC6327C_NL
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541210095
Vds - Drain-Source Breakdown Voltage20 V
DescriptionMOSFET SSOT-6 COMP N-P CH
TradenamePowerTrench
Number of Channels2 Channel
Rise Time9 ns, 14 ns
TypeMOSFET