参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current6.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance36 mOhms
Width1.6 mm
Height1.1 mm
Length2.9 mm
MXHTS85412999
Qg - Gate Charge7.4 nC
KRHTS8541299000
Package / CaseSSOT-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541210000
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.001270 oz
SeriesFDC8886
BrandON Semiconductor / Fairchild
ImageON Semiconductor / Fairchild FDC8886
ManufacturerON Semiconductor
Pd - Power Dissipation1.6 W
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
DescriptionMOSFET 30V N-Channel Power Trench MOSFET
TradenamePowerTrench
Number of Channels1 Channel