参数项参数值
参数项参数值
Forward Transconductance - Min19 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current5.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance35 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time57 ns
Width1.6 mm
Height1.1 mm
Length2.9 mm
MXHTS85412999
Qg - Gate Charge20 nC
KRHTS8541299000
Package / CaseSSOT-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time11 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.001058 oz
BrandON Semiconductor / Fairchild
RoHS Details
SeriesFDC602P
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDC602P
Pd - Power Dissipation1.6 W
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
DescriptionMOSFET P-Ch PowerTrench Specified 2.5V
TradenamePowerTrench
Number of Channels1 Channel
Rise Time11 ns
TypeMOSFET