RF4E100AJTCR

厂牌：ROHM

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046319545

描述：MOSFET N-CH 30V 10A HUML2020; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0094ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:2W; Transistor Case Style:HUML2020; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Forward Transconductance - Min6 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage500 mV

TechnologySi

Id - Continuous Drain Current10 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 12 V, + 12 V

Typical Turn-On Delay Time21 ns

Rds On - Drain-Source Resistance9.4 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time54 ns

MXHTS85412999

KRHTS8541299000

CNHTS8541290000

Qg - Gate Charge13 nC

Package / CaseHUML2020L-8

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

Fall Time20 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

RoHS Details

BrandROHM Semiconductor

ImageROHM Semiconductor RF4E100AJTCR

Unit Weight0.002328 oz

SubcategoryMOSFETs

Product CategoryMOSFET

Factory Pack Quantity3000

ManufacturerROHM Semiconductor

Product TypeMOSFET

Pd - Power Dissipation2 W

Part # AliasesRF4E100AJ

USHTS8541290095

DescriptionMOSFET Nch 30V 10A Si MOSFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time21 ns

Moisture Sensitivity Level1 (Unlimited)