RF4E100AJTCR

厂牌：ROHM

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046319545

描述：MOSFET N-CH 30V 10A HUML2020; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0094ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:2W; Transistor Case Style:HUML2020; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Forward Transconductance - Min6 S

TechnologySi

ConfigurationSingle

Id - Continuous Drain Current10 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage500 mV

Rds On - Drain-Source Resistance9.4 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time54 ns

Vgs - Gate-Source Voltage- 12 V, + 12 V

MXHTS85412999

Typical Turn-On Delay Time21 ns

KRHTS8541299000

CNHTS8541290000

Qg - Gate Charge13 nC

ImageROHM Semiconductor RF4E100AJTCR

Package / CaseHUML2020L-8

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

JPHTS8541290100

RoHS Details

Fall Time20 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

BrandROHM Semiconductor

Unit Weight0.002328 oz

SubcategoryMOSFETs

Product CategoryMOSFET

Factory Pack Quantity3000

Product TypeMOSFET

ManufacturerROHM Semiconductor

Pd - Power Dissipation2 W

Part # AliasesRF4E100AJ

USHTS8541290095

DescriptionMOSFET Nch 30V 10A Si MOSFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time21 ns

Moisture Sensitivity Level1 (Unlimited)