参数项参数值
参数项参数值
DC Current Gain hFE Max120 at 10 mA, 1 V
Gain Bandwidth Product fT500 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max15 V
Continuous Collector Current200 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO4.5 V
Collector-Emitter Saturation Voltage500 mV
DC Collector/Base Gain hfe Min40 at 10 mA, 1 V
Package / CaseTO-18-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 200 C
Minimum Operating Temperature- 65 C
TARIC8541210000
ImageSemelab / TT Electronics 2N2369ACSM
BrandSemelab / TT Electronics
Pd - Power Dissipation360 mW
Factory Pack Quantity100
Product TypeBJTs - Bipolar Transistors
ManufacturerTT Electronics
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANS BI-POLAR SS
USHTS8541290095