参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 80 V
Collector- Emitter Voltage VCEO Max- 65 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 650 mV
DC Collector/Base Gain hfe Min220
MXHTS85423999
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8542390990
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8542390000
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.000282 oz
TARIC8542399000
RoHS Details
Pd - Power Dissipation350 mW
SeriesBC856B
ImageDiodes Incorporated BC856B-13-F
BrandDiodes Incorporated
Factory Pack Quantity10000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8542390001
DescriptionBipolar Transistors - BJT NPN Small SIG -80V -65V VCEO -5.0 VEBO
Moisture Sensitivity Level1 (Unlimited)