参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 80 V
Collector- Emitter Voltage VCEO Max- 65 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 650 mV
DC Collector/Base Gain hfe Min220 at -2 mA, - 5 V
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000176 oz
RoHS Details
Pd - Power Dissipation200 mW
SeriesBC856B
ImageDiodes Incorporated BC856BW-7-F
BrandDiodes Incorporated
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT BIPOLAR TRANSISTOR PNP SOT-323
Moisture Sensitivity Level1 (Unlimited)