参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT100 MHz
ConfigurationDual
Collector- Base Voltage VCBO- 80 V
Collector- Emitter Voltage VCEO Max- 65 V
Continuous Collector Current- 0.1 A
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Minimum Operating Temperature- 55 C
ImageON Semiconductor SBC856BDW1T1G
QualificationAEC-Q101
DescriptionBipolar Transistors - BJT SS SC-88 GP XSTR PNP 65V
Collector-Emitter Saturation Voltage- 0.65 V
Package / CaseSOT-363-6
DC Collector/Base Gain hfe Min220
PackagingMouseReel
PackagingCut Tape
PackagingReel
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Mounting StyleSMD/SMT
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
SeriesBC856B
ManufacturerON Semiconductor
RoHS Details
SubcategoryTransistors
Unit Weight0.000988 oz
Pd - Power Dissipation380 mW
Moisture Sensitivity Level1 (Unlimited)