SBC856BDW1T3G

厂牌：onsemi

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000046324784

描述：Bipolar Transistors - BJT SS GP XSTR PNP 65V

商品参数

参数项参数值

DC Current Gain hFE Max475 at - 2 mA, - 5 V

Gain Bandwidth Product fT100 MHz

Collector- Base Voltage VCBO- 80 V

ConfigurationDual

Collector- Emitter Voltage VCEO Max- 65 V

Continuous Collector Current- 100 mA

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO- 5 V

KRHTS8541219000

QualificationAEC-Q101

JPHTS8541210101

CAHTS8541210000

Minimum Operating Temperature- 55 C

Product CategoryBipolar Transistors - BJT

ImageON Semiconductor SBC856BDW1T3G

Maximum Operating Temperature+ 150 C

DC Collector/Base Gain hfe Min220 at - 2 mA, - 5 V

Package / CaseSOT-363-6

PackagingCut Tape

PackagingMouseReel

PackagingReel

DescriptionBipolar Transistors - BJT SS GP XSTR PNP 65V

Mounting StyleSMD/SMT

TARIC8541210000

ManufacturerON Semiconductor

BrandON Semiconductor

Product TypeBJTs - Bipolar Transistors

Factory Pack Quantity10000

MXHTS85412101

RoHS Details

SubcategoryTransistors

SeriesBC856B

USHTS8541210095

Unit Weight0.000265 oz

CNHTS8541210000

Pd - Power Dissipation380 mW

Moisture Sensitivity Level1 (Unlimited)