BC856BDW1T1G

厂牌：onsemi

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000046324842

描述：TRANS PNP DUAL 65V 100MA SOT-363Bipolar Transistors - BJT 100mA 80V Dual PNP

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商品参数

参数项参数值

Gain Bandwidth Product fT100 MHz

Collector- Base Voltage VCBO- 80 V

Maximum DC Collector Current0.1 A

Collector- Emitter Voltage VCEO Max- 65 V

Continuous Collector Current- 0.1 A

ConfigurationDual

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO5 V

Collector-Emitter Saturation Voltage- 0.65 V

DC Collector/Base Gain hfe Min220

Width1.25 mm

Height0.9 mm

Length2 mm

MXHTS85412101

KRHTS8541219000

Package / CaseSOT-363-6

Mounting StyleSMD/SMT

JPHTS8541210101

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541210000

CNHTS8541210000

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541210000

Unit Weight0.000988 oz

RoHS Details

Pd - Power Dissipation380 mW

ImageON Semiconductor BC856BDW1T1G

SeriesBC856B

BrandON Semiconductor

Product TypeBJTs - Bipolar Transistors

Factory Pack Quantity3000

Product CategoryBipolar Transistors - BJT

ManufacturerON Semiconductor

SubcategoryTransistors

USHTS8541210095

DescriptionBipolar Transistors - BJT 100mA 80V Dual PNP

Moisture Sensitivity Level1 (Unlimited)