参数项参数值
参数项参数值
Collector- Base Voltage VCBO80 V
Collector- Emitter Voltage VCEO Max65 V
Continuous Collector Current0.1 A
ConfigurationSingle
Transistor PolarityPNP
QualificationAEC-Q101
MXHTS85412101
Width1.3 mm
DC Collector/Base Gain hfe Min220
Height0.94 mm
Length2.9 mm
KRHTS8541219000
CNHTS8541210000
Package / CaseSOT-23-3
Maximum Operating Frequency100 MHz
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
SeriesBC856BL
Factory Pack Quantity3000
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Unit Weight0.000282 oz
ManufacturerON Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased SS GP XSTR SPCL TR
Pd - Power Dissipation300 mW
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)