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BC856BDW1T3G
厂牌：onsemi
包装：Tape & Reel (TR) 1
类目：元器件 > 分立器件 > 双极晶体管
编号：B000046324930
描述：TRANS PNP DUAL 65V 100MA SOT-363
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max- 65 V
Continuous Collector Current- 0.1 A
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.25 mm
Collector-Emitter Saturation Voltage- 0.65 V
Height0.9 mm
DC Collector/Base Gain hfe Min220
Length2 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541210000
Factory Pack Quantity10000
BrandON Semiconductor
SeriesBC856B
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
DescriptionBipolar Transistors - BJT 100mA 80V Dual PNP
TARIC8541210000
ImageON Semiconductor BC856BDW1T3G
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000988 oz
SubcategoryTransistors
Pd - Power Dissipation380 mW
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)