参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max- 65 V
Continuous Collector Current- 0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage- 0.65 V
DC Collector/Base Gain hfe Min220
Width1.3 mm
Height0.94 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation225 mW
ImageON Semiconductor BC856BLT1G
SeriesBC856BL
Factory Pack Quantity3000
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
USHTS8541210095
DescriptionBipolar Transistors - BJT 100mA 80V PNP
Moisture Sensitivity Level1 (Unlimited)