参数项参数值
参数项参数值
DC Current Gain hFE Max220 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max65 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min220 at 2 mA, 5 V
Width1.35 mm
Height1 mm
Length2.2 mm
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.000176 oz
RoHS Details
Pd - Power Dissipation200 mW
Part # Aliases934021820135
BrandNexperia
ImageNexperia BC856BW,135
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity10000
SubcategoryTransistors
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS GP TAPE-11
Moisture Sensitivity Level1 (Unlimited)