参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage- 0.65 V
Width1.3 mm
Height0.94 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000282 oz
ImageON Semiconductor MMBT589LT1G
TARIC8541210000
Pd - Power Dissipation310 mW
RoHS Details
Factory Pack Quantity3000
SeriesMMBT589L
ManufacturerON Semiconductor
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
DescriptionBipolar Transistors - BJT 2A 30V Switching PNP
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)