参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO45 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage- 700 mV
DC Collector/Base Gain hfe Min250
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
Unit Weight0.000176 oz
RoHS Details
Pd - Power Dissipation250 mW
SeriesBC807
ImageDiodes Incorporated BC807-40W-7
BrandDiodes Incorporated
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8541210075
DescriptionBipolar Transistors - BJT PNP SURFACE MOUNT TRANSISTOR
Moisture Sensitivity Level1 (Unlimited)